the fourth generation of LED lighting

LED lighting is called the fourth generation or green light, with energy-saving, environmental protection, long life, small size and other characteristics, can be widely used in various directions, display, decoration, backlight, general lighting and urban night scene and other fields. In recent years, some developed countries around the world, the development of LED technology, engaged in a fierce contest. The United States since 2000, invested 500 million U.S. dollars implementing the "National Semiconductor Lighting Plan", the EU was also in July 2000 announced the launch of a similar "Project Rainbow." China's Ministry of Science and in the "863" program support, in June 2003 proposed the development of the first semiconductor lighting program.

    Shenzhen Lian Chuang Environmental Protection Energy Saving Equipment Co., Ltd. as the LED Industry Association, Shenzhen, the first session of the governing unit, has always insisted, "science and technology as the primary productive force, professional quality, customer first "business philosophy, constantly study explorations and innovations. Fully learn from the German "RENUS GMBH" successful experience in the U.S. and European markets, with the Institute of Tsinghua University, Shenzhen, technical strength and advantages of the use of its own R & D, strong-strong joint effort to build the first brand in China energy-saving! Objective in the next few years to gradually become the world's largest energy-saving products, R & D and production base.

The core part of the light-emitting diode is a p-type semiconductor and n-type semiconductor chip formed in the p-type semiconductor and n-type semiconductor between a transition layer known as the pn junction. In some semiconductor materials, PN junction, the injected minority carrier and majority carrier recombination, when will the excess energy is released in the form of light, which converts electrical energy directly into light. PN junction reverse voltage increases, minority-carrier injection is difficult, it is not light. The current light-emitting semiconductor material mainly by the III-V family elements, such as gallium phosphide (GaP), gallium arsenide (GaAs), gallium nitride and so on. In terms of the entire global industry, based on MOCVD epitaxial growth of the technology roadmap is to develop GaN-based optoelectronic materials and devices of the main technical trends. The epitaxial growth of GaN-based materials is to develop GaN-based high-brightness LED and solid-state semiconductor white light illumination of the core technology is a top priority in all of the key problems.

    The current global energy shortage concerns against the backdrop of rising again, energy conservation is an important issue facing the future in lighting, LED light-emitting product applications are attracting the world's attention, LED light source as a new type of green products, is the future trend of development of the twenty-first century will be entered as the representative of the new LED lighting times.